AlGaAs / InCaAs heterostructure doped-channel FETs were used to fabricate a monolithic microwave front-end switch. The gate width of FETs were characterized to obtain an optimum condition to achieve better microwave performance. An insertion loss lower than 1 dB together with an isolation higher than 20 dB can be realized in this monolithic switch at a frequency below 3 GHz. (C) 1996 John Wiley & Sons, Inc.
