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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29377


    Title: DEVICE LINEARITY IMPROVEMENT BY AL0.3GA0.7AS/IN0.2GA0.8AS HETEROSTRUCTURE DOPED-CHANNEL FETS
    Authors: CHAN,YJ;YANG,MT
    Contributors: 電機工程研究所
    Keywords: POWER
    Date: 1995
    Issue Date: 2010-06-29 20:23:09 (UTC+8)
    Publisher: 中央大學
    Abstract: The linearities of pseudomorphic heterostructure Al0.3Ga0.7As/In0.2Ga0.8As doped-channel FET's (DCFET's) and HEMT's were evaluated by DC and RF testings. Due to the absence of parallel conduction in the doped-channel approach, as compared to the modulation-doped structure, a wide and flat device performance together with a high current density was achieved. This improvement of device linearity suggests that doped-channel designs are suitable for high frequency power device application.
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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