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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29410


    Title: CHARACTERISTICS OF PSEUDOMORPHIC ALGAAS INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS
    Authors: YANG,MT;CHAN,YJ;CHEN,CH;CHYI,JI;LIN,RM;SHIEH,JL
    Contributors: 電機工程研究所
    Keywords: HETEROSTRUCTURE
    Date: 1994
    Issue Date: 2010-06-29 20:24:04 (UTC+8)
    Publisher: 中央大學
    Abstract: The pseudomorphic properties of doped-channel field-effect transistors have been thoroughly investigated based on A]GaAs/InGa1-xAs (0 less-than-or-equal-to x less-than-or-equal-to 0.25) heterostructures with different In contents. Through various analytical schemes and device characterization, we observed that by introducing a 150 angstrom strained In0.15Ga0.85As channel we can enhance device performance; however, this strained channel is not stable after high-temperature heat treatment. By further increasing the In content up to x = 0.25, the device performance started to degrade, which is associated with strain relaxation in this highly strained channel.
    Relation: JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[電機工程研究所] 期刊論文

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