English  |  正體中文  |  简体中文  |  Items with full text/Total items : 66984/66984 (100%)
Visitors : 22603314      Online Users : 173
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29414


    Title: ELECTROLUMINESCENCE OF A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH QUANTUM-WELL-INJECTION STRUCTURES
    Authors: JEN,TS;SHIN,NF;TSAY,WC;CHEN,JY;NING,SL;HONG,JW;CHANG,CY
    Contributors: 電機工程研究所
    Keywords: AMORPHOUS-SILICON
    Date: 1994
    Issue Date: 2010-06-29 20:24:10 (UTC+8)
    Publisher: 中央大學
    Abstract: In order to improve the electroluminescence (EL) characteristics of hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLEDs), the quantum-well-injection (QWI) structures have been incorporated into their intrinsic (i-) layer. Two types of TFLED were fabricated to study the effect of the incorporated QWI structures on their EL characteristics: the device I contains a step-gap QWI structure of barrier (15 angstrom)/well (45 angstrom)/barrier (15 angstrom) inserted at both the p-i and i-n interfaces, and the device Il has only one graded-gap QWI structure of barrier (10 angstrom)/well (10 angstrom)/barrier (10 angstrom) inserted at the p-i interface. The obtained brightness of device I was about 10 cd/m2 at an injection current density of 1 A/cm2. The emission light of device I was yellow-like as detected by human eyes. Whereas, for device II, the brightness was about 256 cd/m2 at 800 mA/cm2 and an orange light emission was observed.
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML385View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明