English  |  正體中文  |  简体中文  |  Items with full text/Total items : 69561/69561 (100%)
Visitors : 23146979      Online Users : 784
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29430


    Title: THERMAL-STABILITY OF STRAINED ALGAAS/INXGA1-XAS (0.15-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL STRUCTURES
    Authors: YANG,MT;LIN,RM;CHAN,YJ;SHIEH,JL;CHYI,JI
    Contributors: 電機工程研究所
    Keywords: FIELD-EFFECT TRANSISTORS;QUANTUM
    Date: 1994
    Issue Date: 2010-06-29 20:24:36 (UTC+8)
    Publisher: 中央大學
    Abstract: Thermal stability of strained AlGaAs/InxGa1-xAs (0.15 less than or equal to x less than or equal to 0.25) doped-channel structures was evaluated for different In contents after a high temperature process. Strained channels may be relaxed after heat treatment resulting in carrier decrease, sheet resistance increase, and layers becoming more light sensitive. This degradation is more profound for high In content doped-channel films. Doped-channel FET characteristics confirm this conclusion, and low-fequency noise spectra indicate the existence of traps in the thermally treated devices.
    Relation: GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML425View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明