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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29461


    Title: GRADED-GAP A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES
    Authors: HONG,JW;SHIN,NF;JEN,TS;NING,SL;CHANG,CY
    Contributors: 電機工程研究所
    Date: 1992
    Issue Date: 2010-06-29 20:25:19 (UTC+8)
    Publisher: 中央大學
    Abstract: In order to improve the performance of hydrogenated amorphous-silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLED's), a p-i-n TFLED with a graded p-i junction has been proposed and fabricated. The electroluminescence (EL) intensity of the proposed TFLED was more than 100 times higher than that of the basic p-i-n TFLED and about 35 times lower than that of the conventional green LED, at the same injection current density. This significant improvement was attributed to the better interface property and enhancement of hole injection efficiency by using the graded-gap p-i junction.
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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