In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano COSi2 in nanowires of Si

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題名:	In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano COSi2 in nanowires of Si
作者:	Chou,Yi-Chia;Wu,Wen-Wei;Cheng,Shao-Liang;Yoo,Bong-Young;Myung,Nosang;Chen,Lih J.;Tu,K. N.
貢獻者:	化學工程與材料工程研究所
關鍵詞:	FIELD-EFFECT TRANSISTOR;SILICON NANOWIRES;ELECTRONIC DEVICES;BUILDING-BLOCKS;SINGLE;SURFACE;HETEROSTRUCTURES;NANOTUBES;NICKEL;FUTURE
日期:	2008
上傳時間:	2010-07-06 16:15:15 (UTC+8)
出版者:	中央大學
摘要:	The formation of CoSi and COSi2 in Si nanowires at 700 and 800 degrees C, respectively, by point contact reactions between nanodots of Co and nanowires of Si have been investigated in situ in a ultrahigh vacuum high-resolution transmission electron micros
關聯:	NANO LETTERS????
顯示於類別:	[化學工程與材料工程研究所] 期刊論文

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