Enhanced 400-600 nm photoresponsivity of metal-oxide-semiconductor diodes with multi-stack germanium quantum dots

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題名:	Enhanced 400-600 nm photoresponsivity of metal-oxide-semiconductor diodes with multi-stack germanium quantum dots
作者:	Tzeng,S. S.;Li,P. W.
貢獻者:	電機工程研究所
關鍵詞:	CHARGE-LIMITED CURRENTS;SIGE/SI-ON-INSULATOR;GE NANOCRYSTALS;SELECTIVE OXIDATION;CARRIER TRANSPORT;SIO2 FILM;PHOTOLUMINESCENCE;PHOTODETECTOR;NANOPARTICLES;TEMPERATURE
日期:	2008
上傳時間:	2010-07-06 18:12:32 (UTC+8)
出版者:	中央大學
摘要:	Metal-oxide-semiconductor (MOS) diodes with zero-, one- or three-layer Ge quantum dots (QDs) embedded in the gate oxide are fabricated for visible to near-ultraviolet photodetection. Ge dots are formed by thermally oxidizing one or three stacks of amorpho
關聯:	NANOTECHNOLOGY
顯示於類別:	[電機工程研究所] 期刊論文

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