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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/31868


    Title: Low turn-on voltage and high-current InP/In0.37Ga0.63As0.89Sb0.11/In(0.53)Ga(0.47)AS double heterojunction bipolar transistors
    Authors: Chen,Shu-Han;Teng,Kuo-Hung;Chen,Hsin-Yuan;Wang,Sheng-Yu;Chyi,Jen-Inn
    Contributors: 電機工程研究所
    Keywords: GHZ;DHBTS
    Date: 2008
    Issue Date: 2010-07-06 18:13:19 (UTC+8)
    Publisher: 中央大學
    Abstract: We report on the de and microwave characteristies Of an InP/In0.37Ga0.63As0.89Sb0.11/In0.53Ga0.47As double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic In0.37Ga0.63As0.89Sb0.11 base reduces the conducti
    Relation: IEEE ELECTRON DEVICE LETTERS????
    Appears in Collections:[電機工程研究所] 期刊論文

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