THE BRANCH-CUT METHOD AND ITS APPLICATION TO PARTIALLY DEPLETED SOI MOSFET SIMULATION FOR KINK EFFECT DEFINITION

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Title:	THE BRANCH-CUT METHOD AND ITS APPLICATION TO PARTIALLY DEPLETED SOI MOSFET SIMULATION FOR KINK EFFECT DEFINITION
Authors:	Ho,Chi-Hon;Pon,Jun-Yi;Tsai,Yao-Tsung
Contributors:	電機工程研究所
Keywords:	SEMICONDUCTOR-DEVICE SIMULATION;INCOMPLETE LU METHOD;TRANSISTORS;BREAKDOWN
Date:	2008
Issue Date:	2010-07-06 18:14:15 (UTC+8)
Publisher:	中央大學
Abstract:	In the partially depleted (PD) SOI NMOSFET device, the floating body effect emerges due to the accumulation of excess holes in the neutral Substrate region. The floating, body effect Will cause the Current curve of kink effect ill the saturation region. I
Relation:	JOURNAL OF THE CHINESE INSTITUTE OF ENGINEERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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