Effects of leakage current and Schottky-like ohmic contact on the characterization of Al0.17Ga0.83N/GaN HBTs

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Title:	Effects of leakage current and Schottky-like ohmic contact on the characterization of Al0.17Ga0.83N/GaN HBTs
Authors:	Hsueh,Kuang-Po;Hsin,Yue-Ming;Sheu,Jinn-Kong;Lai,Wei-Chih;Tun,Chun-Ju;Hsu,Chia-Hung;Lin,Bi-Hsuan
Contributors:	電機工程研究所
Keywords:	HETEROJUNCTION BIPOLAR-TRANSISTORS;CHEMICAL-VAPOR-DEPOSITION;P-INGAN;GAN;EMITTER;BASE;TEMPERATURE;LAYER
Date:	2007
Issue Date:	2010-07-06 18:17:00 (UTC+8)
Publisher:	中央大學
Abstract:	This work investigates the effect of non-ideal material and contact conditions on the characterization of Al0.17Ga0.83N/GaN heterojunction bipolar transistors (HBTs) by comparing numerical simulations with measured device characteristics. Al0.17Ga0.83N/Ga
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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