Light output improvement of InGaN ultraviolet light-emitting diodes by using wet-etched stripe-patterned sapphire substrates

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Title:	Light output improvement of InGaN ultraviolet light-emitting diodes by using wet-etched stripe-patterned sapphire substrates
Authors:	Pan,Chang-Chi;Hsieh,Chi-Hsun;Lin,Chih-Wei;Chyi,Jen-Inn
Contributors:	電機工程研究所
Keywords:	VAPOR-PHASE EPITAXY;EXTERNAL-QUANTUM EFFICIENCY;LATERAL OVERGROWTH;GAN;GROWTH;POWER;BLUE
Date:	2007
Issue Date:	2010-07-06 18:17:50 (UTC+8)
Publisher:	中央大學
Abstract:	GaN-based epilayers are grown on wet-etched stripe-patterned sapphire substrates, with stripes along the < 11-20 >(sapphire) and < 1-100 >(sapphire) directions, for 400 nm ultraviolet light-emitting diodes (LEDs). The effects of the etching depth and stri
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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