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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32121


    Title: Temperature-dependent study of n-ZnO/p-GaN diodes
    Authors: Hsueh,Kuang-Po;Huang,Shou-Chien;Li,Ching-Tai;Hsin,Yue-Ming;Sheu,Jinn-Kong;Lai,Wei-Chih;Tun,Chun-Ju
    Contributors: 電機工程研究所
    Date: 2007
    Issue Date: 2010-07-06 18:19:04 (UTC+8)
    Publisher: 中央大學
    Abstract: This work investigates the temperature dependence of the current-voltage (I-V) characteristics of n-ZnO/p-GaN junction diodes. The n-ZnO films were deposited on top of the p-GaN by dc sputtering with subsequent annealings at 500, 600, 700, and 800 degrees
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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