English  |  正體中文  |  简体中文  |  Items with full text/Total items : 69937/69937 (100%)
Visitors : 23194459      Online Users : 757
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32121

    Title: Temperature-dependent study of n-ZnO/p-GaN diodes
    Authors: Hsueh,Kuang-Po;Huang,Shou-Chien;Li,Ching-Tai;Hsin,Yue-Ming;Sheu,Jinn-Kong;Lai,Wei-Chih;Tun,Chun-Ju
    Contributors: 電機工程研究所
    Date: 2007
    Issue Date: 2010-07-06 18:19:04 (UTC+8)
    Publisher: 中央大學
    Abstract: This work investigates the temperature dependence of the current-voltage (I-V) characteristics of n-ZnO/p-GaN junction diodes. The n-ZnO films were deposited on top of the p-GaN by dc sputtering with subsequent annealings at 500, 600, 700, and 800 degrees
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明