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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32145

    Title: 1.32 mu m InAs/GaAs quantum-dot resonant-cavity light-emitting diodes grown by metalorganic chemical vapor deposition
    Authors: Huang,Kun-Fu;Lee,Feng-Ming;Hu,Chih-Wei;Peng,Te-Chin;Wu,Meng-Chyi;Lin,Chia-Chien;Hsieh,Tung-Po;Chyi,Jen-Inn
    Contributors: 電機工程研究所
    Date: 2006
    Issue Date: 2010-07-06 18:19:35 (UTC+8)
    Publisher: 中央大學
    Abstract: The first demonstration of InAs/GaAs quantum-dot (QD) resonant-cavity light-emitting diode (RCLED) operating at 1.32 mu m at room temperature is reported. A single-layer InAs QDs inserted in GaAs matrix as the active medium was grown by metalorganic chemi
    Appears in Collections:[電機工程研究所] 期刊論文

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