Bandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelength

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Title:	Bandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelength
Authors:	Shi,Jin-Wei;Li,Yu-Tai;Pan,Ci-Ling;Lin,M. L.;Wu,Y. S.;Liu,W. S.;Chyi,J. -I.
Contributors:	電機工程研究所
Keywords:	PERFORMANCE;POWER
Date:	2006
Issue Date:	2010-07-06 18:20:05 (UTC+8)
Publisher:	中央大學
Abstract:	In this letter, the authors introduce a GaAs/AlGaAs based unitraveling carrier photodiode (UTC-PD) for a wavelength of around 830 nm. There is significant bias- and output-current-dependent bandwidth enhancement phenomena observed with this device. Accord
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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