Bandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelength

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 期刊論文 > Item 987654321/32165

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/32165

题名:	Bandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelength
作者:	Shi,Jin-Wei;Li,Yu-Tai;Pan,Ci-Ling;Lin,M. L.;Wu,Y. S.;Liu,W. S.;Chyi,J. -I.
贡献者:	電機工程研究所
关键词:	PERFORMANCE;POWER
日期:	2006
上传时间:	2010-07-06 18:20:05 (UTC+8)
出版者:	中央大學
摘要:	In this letter, the authors introduce a GaAs/AlGaAs based unitraveling carrier photodiode (UTC-PD) for a wavelength of around 830 nm. There is significant bias- and output-current-dependent bandwidth enhancement phenomena observed with this device. Accord
關聯:	APPLIED PHYSICS LETTERS
显示于类别:	[電機工程研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	415	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing