English  |  正體中文  |  简体中文  |  Items with full text/Total items : 67621/67621 (100%)
Visitors : 23159784      Online Users : 371
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32183


    Title: Enhancing luminescence efficiency of InAs quantum dots at 1.5 mu m using a carrier blocking layer
    Authors: Hsieh,Tung-Po;Chiu,Pei-Chin;Chyi,Jen-Inn;Chang,Hsiang-Szu;Chen,Wen-Yen;Hsu,Tzu Min;Chang,Wen-Hao
    Contributors: 電機工程研究所
    Keywords: CHEMICAL-VAPOR-DEPOSITION;OPTICAL-PROPERTIES;LASERS;GAAS;SEPARATION;EMISSION;MATRIX;RANGE
    Date: 2006
    Issue Date: 2010-07-06 18:20:32 (UTC+8)
    Publisher: 中央大學
    Abstract: The authors report an effective way to enhance the optical efficiency of InAs quantum dots (QDs) on GaAs emitting at the wavelength of 1.5 mu m. It is found that the loss of holes from QDs to their proximity via the high indium composition InGaAs overgrow
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML372View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明