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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32183

    Title: Enhancing luminescence efficiency of InAs quantum dots at 1.5 mu m using a carrier blocking layer
    Authors: Hsieh,Tung-Po;Chiu,Pei-Chin;Chyi,Jen-Inn;Chang,Hsiang-Szu;Chen,Wen-Yen;Hsu,Tzu Min;Chang,Wen-Hao
    Contributors: 電機工程研究所
    Date: 2006
    Issue Date: 2010-07-06 18:20:32 (UTC+8)
    Publisher: 中央大學
    Abstract: The authors report an effective way to enhance the optical efficiency of InAs quantum dots (QDs) on GaAs emitting at the wavelength of 1.5 mu m. It is found that the loss of holes from QDs to their proximity via the high indium composition InGaAs overgrow
    Appears in Collections:[電機工程研究所] 期刊論文

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