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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32223


    Title: RF power characteristics of SiGeHBTs at cryogenic temperatures
    Authors: Hsieh,Meng-Wei;Hsin,Yue-Ming;Liang,Kung-Hao;Chan,Yi-Jen;Tang,Denny
    Contributors: 電機工程研究所
    Keywords: BIPOLAR-TRANSISTORS
    Date: 2006
    Issue Date: 2010-07-06 18:21:34 (UTC+8)
    Publisher: 中央大學
    Abstract: This paper investigates the temperature dependence (from 77 to 300 K) of dc, ac, and power characteristics for n-p-n SiGe heterojunction bipolar transistors (HBTs) with and without selectively implanted collector (SIC). In SiGe HBTs without SIC, the valan
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES
    Appears in Collections:[電機工程研究所] 期刊論文

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