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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32316


    Title: Improvement of mesa-sidewall leakage current using benzocyclobuten sidewall process in InGaAs/InP MSM photodetector
    Authors: Chiu,WY;Huang,FH;Wu,YS;Lin,DM;Chan,YJ;Chen,SH;Chyi,JI;Shi,JW
    Contributors: 電機工程研究所
    Keywords: PERFORMANCE
    Date: 2005
    Issue Date: 2010-07-06 18:23:54 (UTC+8)
    Publisher: 中央大學
    Abstract: In recent decades, metal - semiconductor-metal (MSM) photodetector for optical fiber communication applications have been studied extensively. The dark current in MSM PD is an important parameter that can be reduced by schottky barrier enhancement and fab
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
    Appears in Collections:[電機工程研究所] 期刊論文

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