Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix

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Title:	Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix
Authors:	Liu,WS;Chyi,JI
Contributors:	電機工程研究所
Keywords:	1.3 MU-M;GAAS;SEPARATION;EMISSION;ENERGY;INALAS;8-BAND;LASER;LAYER
Date:	2005
Issue Date:	2010-07-06 18:24:23 (UTC+8)
Publisher:	中央大學
Abstract:	InAs quantum dots (QDs) in various matrices, such as InAlAs, InGaAs, InAlAs/InGaAs, and InGaAs/InAlAs, are prepared to clarify how the overgrown layers affect their optical properties. It is shown that strain reduction mechanism dominates the emission wav
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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