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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32346


    Title: Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors
    Authors: Chu,SNG;Ren,F;Pearton,SJ;Kang,BS;Kim,S;Gila,BP;Abernathy,CR;Chyi,JI;Johnson,WJ;Lin,J
    Contributors: 電機工程研究所
    Keywords: GA-FACE;HETEROSTRUCTURES;CHARGE;STRAIN;CONDUCTIVITY;TRANSISTORS;SCATTERING;FIELD
    Date: 2005
    Issue Date: 2010-07-06 18:24:38 (UTC+8)
    Publisher: 中央大學
    Abstract: The wurtzite group-III nitrides exhibit piezoelectric polarization along their c-axis. Differential piezoelectric and spontaneous polarizations in strained AlGaN/GaN heterostructure grown on [000 1] sapphire substrates induce two-dimensional electron gas
    Relation: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
    Appears in Collections:[電機工程研究所] 期刊論文

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