Power performance enhancement of metamorphic In0.3Al0.7As/In0.45Ga0.55As HEMTs using pseudomorphic channel design

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32348

Title:	Power performance enhancement of metamorphic In0.3Al0.7As/In0.45Ga0.55As HEMTs using pseudomorphic channel design
Authors:	Lin,CK;Wu,JC;Chan,YJ;Wu,JS;Pan,YC;Tsai,CC;Lai,JT
Contributors:	電機工程研究所
Date:	2005
Issue Date:	2010-07-06 18:24:40 (UTC+8)
Publisher:	中央大學
Abstract:	In this study, we inserted an In0.45Ga0.55As pseudomorphic channel inside the wide bandgap In0.3Al0.7As layer on GaAs substrates to improve carrier confinement and device microwave power performance, as compared with the In0.3Ga0.7As lattice matched ones.
Relation:	COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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