Transient pulsed analysis on GaNHEMTs at cryogenic temperatures

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32362

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32362

Title:	Transient pulsed analysis on GaNHEMTs at cryogenic temperatures
Authors:	Lin,CH;Wang,WK;Lin,PC;Lin,CK;Chang,YJ;Chan,YJ
Contributors:	電機工程研究所
Keywords:	IMPACT IONIZATION;INALAS/INGAAS HEMTS
Date:	2005
Issue Date:	2010-07-06 18:25:08 (UTC+8)
Publisher:	中央大學
Abstract:	A pulsed measurement of AlGaN/GaN high electron mobility transistors (HEMTs) current-voltage (I-V) output characteristics from 100 to 300 K temperatures has been systematically investigated, and a significant kink is clearly observed, which is more severe
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	536	View/Open

社群 sharing