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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32365


    Title: Tunneling current through a single germanium quantum dot
    Authors: Kuo,DMT;Li,PW
    Contributors: 電機工程研究所
    Keywords: SIGE/SI-ON-INSULATOR;ELECTRON TRANSISTOR;ROOM-TEMPERATURE;SELECTIVE OXIDATION;OSCILLATIONS;TRANSPORT;ENERGY
    Date: 2005
    Issue Date: 2010-07-06 18:25:15 (UTC+8)
    Publisher: 中央大學
    Abstract: The tunneling current through a germanium quantum dot (Ge QD) of nanometer size is studied theoretically. The energy levels and Coulomb interactions of electrons in a Ge QD are calculated using an effective mass model. In small Ge QDs, the interlevel Coul
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
    Appears in Collections:[電機工程研究所] 期刊論文

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