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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32385


    Title: AlGaN/GaN HEMT based liquid sensors
    Authors: Mehandru,R;Luo,B;Kang,BS;Kim,J;Ren,F;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: ELECTRON-MOBILITY TRANSISTORS;POWER PERFORMANCE;GAN SURFACES;DEVICES;PASSIVATION;DISPERSION;GHZ
    Date: 2004
    Issue Date: 2010-07-06 18:26:00 (UTC+8)
    Publisher: 中央大學
    Abstract: An AlGaN/GaN high electron mobility transistor structure was used for sensing different liquids present in the gate region. The forward current showed significant decreases upon exposure of the gate area to solvents (water, acetone) or acids (HCl). The pH
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[電機工程研究所] 期刊論文

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