Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32417

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Title:	Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
Authors:	Cheng,YC;Lin,EC;Wu,CM;Yang,CC;Yang,JR;Rosenauer,A;Ma,KJ;Shi,SC;Chen,LC;Pan,CC;Chyi,JI
Contributors:	電機工程研究所
Keywords:	OPTICAL-PROPERTIES;SI;BARRIERS;DYNAMICS
Date:	2004
Issue Date:	2010-07-06 18:27:07 (UTC+8)
Publisher:	中央大學
Abstract:	The results of photoluminescence (PL), detection-energy-dependent photoluminescence excitation (DEDPLE), excitation-energy-dependent photoluminescence (EEDPL), and strain state analysis (SSA) of three InGaN/GaN quantum-well (QW) samples with silicon dopin
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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