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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32448


    Title: Lateral Schottky GaN rectifiers formed by Si+ ion implantation
    Authors: Irokawa,Y;Kim,J;Ren,F;Baik,KH;Gila,BP;Abernathy,CR;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: LIQUID-NITROGEN TEMPERATURE;P-GAN;SURFACE EROSION;DAMAGE;BOMBARDMENT;SEMICONDUCTORS;ACTIVATION;DISORDER;NITRIDE;DEFECTS
    Date: 2004
    Issue Date: 2010-07-06 18:28:11 (UTC+8)
    Publisher: 中央大學
    Abstract: Type conversion of p-GaN by direct Si+ ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si+ activation percentage was measured as a function of annealing time (30-300 see) and temperature (1,000
    Relation: JOURNAL OF ELECTRONIC MATERIALS
    Appears in Collections:[電機工程研究所] 期刊論文

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