English  |  正體中文  |  简体中文  |  Items with full text/Total items : 69561/69561 (100%)
Visitors : 23117755      Online Users : 207
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32463


    Title: Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes
    Authors: Irokawa,Y;Kim,J;Ren,F;Baik,KH;Gila,BP;Abernathy,CR;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: LIQUID-NITROGEN TEMPERATURE;ION-IMPLANTATION;SURFACE EROSION;BOMBARDMENT;DISORDER;NITRIDE;DAMAGE;SEMICONDUCTORS;DIFFUSION;LOCATION
    Date: 2003
    Issue Date: 2010-07-06 18:28:42 (UTC+8)
    Publisher: 中央大學
    Abstract: The electrical activation characteristics of implanted Si+ in GaN were investigated as a function of annealing temperature (1000 degreesC-1200 degreesC). The maximum activation percentage for an ion dose of 2.5x10(14) cm(-2) was similar to30% with an appa
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML386View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明