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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32482


    Title: Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator
    Authors: Li,PW;Liao,WM;Lin,SW;Chen,PS;Lu,SC;Tsai,MJ
    Contributors: 電機工程研究所
    Keywords: SINGLE-ELECTRON TRANSISTORS;COULOMB-BLOCKADE;FABRICATION
    Date: 2003
    Issue Date: 2010-07-06 18:29:18 (UTC+8)
    Publisher: 中央大學
    Abstract: A complementary metal-oxide-semiconductor-compatible method is proposed to form atomic-scale germanium (Ge) quantum dots (<10 nm) for application in single-electron devices or optical devices. The formation of Ge quantum dots is realized by the Ge atoms'
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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