Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32482

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Title:	Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator
Authors:	Li,PW;Liao,WM;Lin,SW;Chen,PS;Lu,SC;Tsai,MJ
Contributors:	電機工程研究所
Keywords:	SINGLE-ELECTRON TRANSISTORS;COULOMB-BLOCKADE;FABRICATION
Date:	2003
Issue Date:	2010-07-06 18:29:18 (UTC+8)
Publisher:	中央大學
Abstract:	A complementary metal-oxide-semiconductor-compatible method is proposed to form atomic-scale germanium (Ge) quantum dots (<10 nm) for application in single-electron devices or optical devices. The formation of Ge quantum dots is realized by the Ge atoms'
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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