Improving contact performances of Al(Al/Pd) and i-a-SiGe : H interface using an additional very thin Sb layer

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32546

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32546

Title:	Improving contact performances of Al(Al/Pd) and i-a-SiGe : H interface using an additional very thin Sb layer
Authors:	Lin,CS;Yeh,RH;Li,IX;Hong,JW
Contributors:	電機工程研究所
Keywords:	SCHOTTKY;TRANSISTORS;MOSFETS
Date:	2002
Issue Date:	2010-07-06 18:31:34 (UTC+8)
Publisher:	中央大學
Abstract:	A very thin Sb layer, which is an n-type dopant for i-a-SiGe:H and was inserted between the Al or Al/Pd and i-a-SiGe:H layers, was successfully employed to reduce the specific contact resistance (R) of these two interfaces. The R of the Al(Al/Pd) and i-a-
Relation:	ELECTRONICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	367	View/Open

社群 sharing