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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32546


    Title: Improving contact performances of Al(Al/Pd) and i-a-SiGe : H interface using an additional very thin Sb layer
    Authors: Lin,CS;Yeh,RH;Li,IX;Hong,JW
    Contributors: 電機工程研究所
    Keywords: SCHOTTKY;TRANSISTORS;MOSFETS
    Date: 2002
    Issue Date: 2010-07-06 18:31:34 (UTC+8)
    Publisher: 中央大學
    Abstract: A very thin Sb layer, which is an n-type dopant for i-a-SiGe:H and was inserted between the Al or Al/Pd and i-a-SiGe:H layers, was successfully employed to reduce the specific contact resistance (R) of these two interfaces. The R of the Al(Al/Pd) and i-a-
    Relation: ELECTRONICS LETTERS
    Appears in Collections:[Graduate Institute of Electrical Engineering] journal & Dissertation

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