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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32547


    Title: InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy
    Authors: Yeh,NT;Liu,WS;Chen,SH;Chiu,PC;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: CHEMICAL-VAPOR-DEPOSITION;ROOM-TEMPERATURE;THRESHOLD
    Date: 2002
    Issue Date: 2010-07-06 18:31:36 (UTC+8)
    Publisher: 中央大學
    Abstract: This letter presents the lasing properties of InAs/GaAs quantum dot lasers with InGaP cladding layers grown by solid-source molecular-beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm(2), an internal loss of 1.35 cm(-1), a
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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