Investigation of InAs/GaAs quantum-dot infrared photodetector with In0.5Ga0.5P dark current blocking layer

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Title:	Investigation of InAs/GaAs quantum-dot infrared photodetector with In0.5Ga0.5P dark current blocking layer
Authors:	Jiang,L;Li,SS;Yeh,NT;Chyi,JI;Tidrow,MZ
Contributors:	電機工程研究所
Date:	2002
Issue Date:	2010-07-06 18:31:48 (UTC+8)
Publisher:	中央大學
Abstract:	A novel InAs/GaAs quantum-dot infrared photodetector with an In0.5Ga0.5P dark current blocking layer for long-wavelength infrared (LWIR) detection has been developed in this work. Very low dark current densities were obtained at V-b = -0.5 V (10(-10) A/cm
Relation:	ELECTRONICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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