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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32561


    Title: Phonon-replica transitions in InGaN/GaN quantum well structures
    Authors: Feng,SW;Tsai,CY;Cheng,YC;Liao,CC;Yang,CC;Lin,YS;Ma,KJ;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: PHOTOLUMINESCENCE;LASER;LUMINESCENCE;LOCALIZATION;DOTS;GAN
    Date: 2002
    Issue Date: 2010-07-06 18:32:08 (UTC+8)
    Publisher: 中央大學
    Abstract: A side-bump feature in a photoluminescence (PL) spectrum of an InGaN compound was widely observed. With reasonable fitting to PL spectra with three Gaussian distributions, the temperature variations of the peak positions, integrated PL intensities, and pe
    Relation: OPTICAL AND QUANTUM ELECTRONICS
    Appears in Collections:[電機工程研究所] 期刊論文

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