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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32573


    Title: A comparative study of the passivation films on AlGaAs/GaAs heterojunction diodes and bipolar transistors
    Authors: Hwang,HP;Cheng,YS;Shieh,JL;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: SURFACE;RECOMBINATION;TEMPERATURE
    Date: 2001
    Issue Date: 2010-07-06 18:32:36 (UTC+8)
    Publisher: 中央大學
    Abstract: A series of Si-based thin films, including amorphous Si, SiC, as well as the conventionalSiO(infinity) and SINinfinity, was investigated in terms of the electrical characteristics of GaAs/Al0.3Ga0.7As heterostructure diodes and heterojunction bipolar tran
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES
    Appears in Collections:[電機工程研究所] 期刊論文

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