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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32595


    Title: Device linearity and gate voltage swing improvement by Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel design
    Authors: Chien,FT;Chiu,HC;Yang,SC;Chen,CW;Chan,YJ
    Contributors: 電機工程研究所
    Keywords: FET;SINGLE;BAND
    Date: 2001
    Issue Date: 2010-07-06 18:33:23 (UTC+8)
    Publisher: 中央大學
    Abstract: Devices DC, RF, and microwave power performances between Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel FET (D-DCFETs), conventional doped-channel FETs (DCFETs) and HEMTs are compared with each other. Device linearity and power performance have been imp
    Relation: IEICE TRANSACTIONS ON ELECTRONICS
    Appears in Collections:[電機工程研究所] 期刊論文

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