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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32625


    Title: Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure
    Authors: Lin,CJ;Huang,YS;Li,NY;Li,PW;Tiong,KK
    Contributors: 電機工程研究所
    Keywords: BAND-GAP REDUCTION;GAINP/GAAS HETEROJUNCTION;LASER-DIODES;GAAS;SEMICONDUCTORS;SPECTROSCOPY;OFFSETS;GAINNAS;GAINP2;FIELDS
    Date: 2001
    Issue Date: 2010-07-06 18:34:28 (UTC+8)
    Publisher: 中央大學
    Abstract: We have characterized an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure using polarized photoreflectance (PR) spectroscopy. The ordering parameter of the InGaP is deduced from the polarization {[110] and [1 (1) over bar0]} depen
    Relation: JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[電機工程研究所] 期刊論文

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