Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32665

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32665

Title:	Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures
Authors:	Yeh,NT;Nee,TE;Chyi,JI;Hsu,TM;Huang,CC
Contributors:	電機工程研究所
Keywords:	1.3 MU-M;GAAS
Date:	2000
Issue Date:	2010-07-06 18:35:54 (UTC+8)
Publisher:	中央大學
Abstract:	We report on the matrix-dependent strain effect in self-assembled InAs quantum-dot heterostructures using photoluminescence measurements. A series of samples were prepared to examine the effect of quantum dot position with respect to the so-called strain-
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	605	View/Open

社群 sharing