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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32722


    Title: Pinholelike defects in multistack 1.3 mu m InAs quantum dot laser
    Authors: Liu,WS;Chang,HL;Liu,YS;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: INFRARED PHOTODETECTOR;TEMPERATURE;EMISSION;OVERGROWTH;STRAIN;MATRIX
    Date: 2006
    Issue Date: 2010-07-07 09:56:18 (UTC+8)
    Publisher: 中央大學
    Abstract: The pinholelike defects often observed in multistack InAs quantum dot structures on GaAs have been investigated comprehensively. Due to the high surface stress of InAs quantum dots, the overgrowth of GaAs and InGaAs capping layers on InAs quantum dots is
    Relation: JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[電機工程研究所] 期刊論文

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