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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32727


    Title: Si-diffused GaN for enhancernent-mode GaN MOSFET on Si applications
    Authors: Jang,S;Ren,F;Pearton,SJ;Gila,BP;Hlad,M;Abernathy,CR;Yang,H;Pan,CJ;Chyi,JI;Bove,P;Lahreche,H;Thuret,J
    Contributors: 電機工程研究所
    Keywords: FIELD-EFFECT-TRANSISTORS;INSULATOR-SEMICONDUCTOR STRUCTURES;CHEMICAL-VAPOR-DEPOSITION;N-TYPE GAN;INVERSION BEHAVIOR;ELECTRICAL CHARACTERIZATION;GATE OXIDE;DIODES;PERFORMANCE;INTERFACE
    Date: 2006
    Issue Date: 2010-07-07 09:56:27 (UTC+8)
    Publisher: 中央大學
    Abstract: Si diffusion into GaN was studied as a function of encapsulant type (SiO2 or SiNx) and diffusion temperature. Using a SiO2 encapsulant, the Si diffusion exhibited an activation energy of 0.57 eV with a prefactor of 2.07 X 10(-4) cm(2) sec(-1) in the tempe
    Relation: JOURNAL OF ELECTRONIC MATERIALS
    Appears in Collections:[電機工程研究所] 期刊論文

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