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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35346


    Title: Characterization of AlF3 thin films at 193 nm by thermal evaporation
    Authors: Lee,CC;Liu,MC;Kaneko,M;Nakahira,K;Takano,Y
    Contributors: 光電科學與工程學系
    Keywords: MICROSTRUCTURAL PROPERTIES;OPTICAL-CONSTANTS;MGF2;ULTRAVIOLET;COATINGS;LITHOGRAPHY;DEPOSITION;FLUORIDE;BAF2;CAF2
    Date: 2005
    Issue Date: 2010-07-07 14:11:18 (UTC+8)
    Publisher: 中央大學
    Abstract: Aluminum fluoride (AlF3) was deposited by a resistive heating boat. To obtain a low optical loss and high laser-induced damage threshold (LIDT) at 193 nm, the films were investigated under different substrate temperatures, deposition rates, and annealing
    Relation: APPLIED OPTICS
    Appears in Collections:[光電科學與工程學系] 期刊論文

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