English  |  正體中文  |  简体中文  |  Items with full text/Total items : 68069/68069 (100%)
Visitors : 23158178      Online Users : 419
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/49865

    Title: Growth Mechanism of a Ternary (Cu,Ni)(6)Sn(5) Compound at the Sn(Cu)/Ni(P) Interface
    Authors: Huang,TS;Tseng,HW;Lu,CT;Hsiao,YH;Chuang,YC;Liu,CY
    Contributors: 化學工程與材料工程學系
    Date: 2010
    Issue Date: 2012-03-27 16:25:04 (UTC+8)
    Publisher: 國立中央大學
    Abstract: The growth mechanism of an interfacial (Cu,Ni)(6)Sn(5) compound at the Sn(Cu) solder/Ni(P) interface under thermal aging has been studied in this work. The activation energy for the formation of the (Cu,Ni)(6)Sn(5) compound for cases of Sn-3Cu/Ni(P), Sn-1.8Cu/Ni(P), and Sn-0.7Cu/Ni(P) was calculated to be 28.02 kJ/mol, 28.64 kJ/mol, and 29.97 kJ/mol, respectively. The obtained activation energy for the growth of the (Cu,Ni)(6)Sn(5) compound layer was found to be close to the activation energy for Cu diffusion in Sn (33.02 kJ/mol). Therefore, the controlling step for formation of the ternary (Cu,Ni)(6)Sn(5) layer could be Cu diffusion in the Sn(Cu) solder matrix.
    Appears in Collections:[化學工程與材料工程學系 ] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明