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    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/51034


    題名: GaN Epitaxial Layers Prepared on Nano-Patterned Si(001) Substrate
    作者: Huang,CC;Chang,SJ;Kuo,CH;Ko,CH;Wann,CH;Cheng,YC;Lin,WJ
    貢獻者: 光電科學與工程學系
    關鍵詞: VAPOR-PHASE EPITAXY;LIGHT-EMITTING-DIODES;GALLIUM NITRIDE;BUFFER LAYERS;CUBIC GAN;SAPPHIRE;GROWTH;FILMS;SI;SILICON
    日期: 2011
    上傳時間: 2012-03-27 18:16:12 (UTC+8)
    出版者: 國立中央大學
    摘要: We report the growth of GaN epitaxial layer on Si(001) substrate with nano-patterns prepared by dry etching facility used in integrated circuit (IC) industry. It was found that the GaN epitaxial layer prepared on nano-patterned Si(001) substrate exhibits both cubic and hexagonal phases. It was also found that threading dislocation observed from GaN prepared on nano-patterned Si(001) substrate was significantly smaller than that prepared on conventional unpatterned Si(111) substrate. Furthermore, it was found that we can reduce the tensile stress in GaN epitaxial layer by about 78% using the nano-patterned Si(001) substrate.
    關聯: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
    顯示於類別:[光電科學與工程學系] 期刊論文

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