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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51992


    Title: Stability Improvement of Organic Thin-Film Transistors Using Stacked Gate Dielectrics
    Authors: Lo,PY;Li,PW;Chan,YJ
    Contributors: 電機工程學系
    Keywords: PERFORMANCE;DEPENDENCE;TFTS
    Date: 2010
    Issue Date: 2012-03-28 10:12:47 (UTC+8)
    Publisher: 國立中央大學
    Abstract: Poly-3-hexylthiophene organic thin-film transistors (OTFTs) were fabricated with different kinds of stacked gate dielectrics, which exhibit an individual effective trap behavior. The transistor fabricated with a stacked gate dielectric in a donor-like trap behavior exhibits a significant current hysteresis loop, a large threshold voltage shift, and subthreshold swing changes during operation in the dark and under illumination. The device performance is improved using a stacked gate dielectric with acceptor-like traps. The mechanisms of OTFTs with an acceptor-like trap dielectric and a donor-like dielectric are discussed.
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES
    Appears in Collections:[電機工程學系] 期刊論文

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