English  |  正體中文  |  简体中文  |  Items with full text/Total items : 66984/66984 (100%)
Visitors : 23025983      Online Users : 348
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/52043


    Title: Controlled Heterogeneous Nucleation and Growth of Germanium Quantum Dots on Nanopatterned Silicon Dioxide and Silicon Nitride Substrates
    Authors: Chen,KH;Chien,CY;Lai,WT;George,T;Scherer,A;Li,PW
    Contributors: 電機工程學系
    Keywords: NANOCRYSTALS;OXIDATION
    Date: 2011
    Issue Date: 2012-03-28 10:14:01 (UTC+8)
    Publisher: 國立中央大學
    Abstract: Controlled heterogeneous nucleation and growth of Ge quantum dots (QDs) are demonstrated on SiO(2)/Si(3)N(4) substrates by means of a novel fabrication process of thermally oxidizing nanopatterned SiGe layers. The otherwise random self-assembly process for QDs is shown to be strongly influenced by the nanopatterning in determining both the location and size of the QDs. Ostwald ripening processes are observed under further annealing at the oxidation temperature Both nanopattern oxidation and Ostwald ripening offer additional mechanisms for lithography for controlling the size and placement of the QDs.
    Relation: CRYSTAL GROWTH & DESIGN
    Appears in Collections:[電機工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML281View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明