在本篇論文中，我們將探討雙閘極金氧半場效電晶體的結構，而這結構有以下優點:有效抑制短通道效應、低功率消耗、良好的閘極通道控制能力、較好的電流驅動力、較低的通道漏電流以及接近理想的次臨限擺幅等。接著我們利用二維元件模擬器探討雙閘極金氧半場效電晶體的元件特性，分析雙閘極與單閘極元件的Id-Vg 曲線、單閘極與雙閘極在不同通道長度下的次臨限擺幅差異以及雙閘極元件在不同體矽厚度下的漏電流。最後，利用臨限電壓公式驗證元件的開發是否正確，再來探討改變各種參數對於元件的影響。In this thesis, we will investigate the structure of the double-gate MOSFETs. This structure has the following advantages: better short channel effect, low power consumption, good gate-channel control capability, better current driving force, the lower channel leakage current and near ideal sub-threshold swing, etc. Then we design a 2-D device simulator to investigate the device characteristics of the double-gate MOSFET. We analyze the Id-Vg curves of the double gate and single-gate components, sub-threshold swing difference in the different channel length, and double-gate leakage current in the different thickness of the bulk silicon. Finally, we use the threshold voltage formula to verify the validity of the 2-D device simulator,and then analyze the impact of the various design parameters.
