我們證明了在850奈米波段的垂直共振腔面射型(VCSEL)雷射陣列上有高功率輸出、單模態的遠場、窄發散角的特性。我們透過是當的鋅擴散製程來調製鋅擴散孔徑跟氧化電流侷限孔徑的尺寸，使展現出每顆VCSEL都是高單模(highly single-mode)，窄遠場發散角（~6°）即有最大的輸出功率(~6.5mW)。而6x6跟10x10展現了單葉(single-lobe)遠場、窄發散角(~8°)，輸出功率分別達到104mW跟145mW。此外，透過量測陣列中不同位置的輸出光頻譜(optical spectra)，得知幾乎都是單模態的呈現，顯示出我們VCSEL陣列有良好的均勻性。此結果甚至優於其他大面積的同調激發(coherent lasing)光子晶體(photonic crystal)雷射。 We demonstrate novel structures of 850 nm vertical-cavity surface-emitting laser (VCSEL) array for high output power, single-lobe far-field, and narrow divergence angle. By use of the Zn-diffusion process with proper sizes of oxide current-confined and Zn-diffusion apertures, each unit of VCSEL in the demonstrated array is highly single-mode (side-mode suppression ratio > 30 dB) with a narrow far-field divergence angle (~60) and high maximum single-mode output power (~6.5 mW). Due to the excellent uniformity of single-mode performance of each VCSEL unit, both 6×6 and 10×10 array exhibit a single-lobe far-field, narrow divergence angle (~80), and output power as high as 104 and 145 mW, respectively. Furthermore, by measuring the bias dependent output optical spectra in different positions of our array, the high similarity of these spectra indicates the excellent uniformity of our process for single-mode VCSEL performance. Such measured result is even comparable with the reported large-area coherent lasing photonic crystal laser.
