English  |  正體中文  |  简体中文  |  Items with full text/Total items : 75369/75369 (100%)
Visitors : 24722412      Online Users : 291
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/65818

    Title: 標準CMOS製程結合後製程之850-nm矽累崩光檢測器;850-nm Si Avalanche Photodiodes in Standard CMOS Technology with Back-end Process
    Authors: 黃智愛;Huang,Chih-Ai
    Contributors: 電機工程學系
    Keywords: 光檢測器;標準CMOS製程;後製程;Photodiodes;CMOS;Back-end Process
    Date: 2014-08-19
    Issue Date: 2014-10-15 17:11:00 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 本論文利用0.18 µm標準CMOS製程結合後製程實現850-nm矽累崩光檢測器,為了排除基板空乏區外照光而產生之擴散載子,利用後製程來蝕刻元件之背面基板,達到直接排除擴散載子之效果。透過Silvaco公司之二維元件模擬軟體研究,基板厚度的減少可改善擴散載子造成之頻率響應滑落(roll-off)的情形,進而提升3-dB頻寬。同時針對不同的元件結構設計,分別為水平式之累崩光檢測器以及P-I-N結構之光檢測器,將其操作在累崩區來做比較。最後並接著針對矽累崩光檢測器之吸光區尺寸作進一步的分析,透過金屬層區隔累崩區及吸光區,隨著吸光區寬度的減少,所收集到的光電流中擴散載子成份也會下降,使得元件之3-dB頻寬提升至8 GHz。另外也利用光脈衝響應之量測,研究不同元件對脈衝的反應,分析出長尾巴效應(long tail effect)的存在與頻寬的關係。;This study presents lateral avalanche photodetectors (APDs) implemented in standard 0.18 µm CMOS technology operating at 850-nm wavelength. In order to reduce the slow diffusion carriers generated within the Si substrate, it is necessary to utilize simple back-end processes after standard CMOS process to remove thick Si substrate. Silvaco TCAD simulation is used to verify that the diffusion roll-off in APD could be improved by reducing the diffusion component of photo-current by thinning the Si substrate. Furthermore, this study compared different device structures including avalanche photodetectors and P-I-N photodetectors after substrate thinning. Finally, the different absorption region widths of APDs are discussed. While the absorption region width decreased, the amount of diffusion carriers is reduced in photo-current and thus achieved 3-dB bandwidth of 8 GHz. Besides, long tail effect in connection with frequency response can be verified by the pulse measurement.
    Appears in Collections:[電機工程研究所] 博碩士論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明