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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/66903

    Title: 在SOI基板上以快速熱熔法製造高品質鍺及近紅外線光偵測元件之研製;High-Quality Ge on SOI for Near Infrared Photodetector by Rapid-Melting-Growth Technique
    Authors: 王上明;Wang,Shang-ming
    Contributors: 電機工程學系
    Keywords: 矽鍺;快速熱熔法;近紅外光
    Date: 2015-01-20
    Issue Date: 2015-03-16 15:59:00 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 隨著高速通訊快速的發展,光傳輸是許多團隊研究的重點,本論文所呈獻之成果為高品質鍺製作成的光偵測器和特性量測,及其在光通訊上的應用潛力。我們利用SOI wafer蝕刻出許多矽長條型結構後,由國家奈米元件中心(NDL)進行離子佈值分別以BF2、As摻雜成為P型以及N型相間的陣列,在P型和N型矽上方鍍上一層鍺膜,再將試片在爐管中進行超過鍺熔點溫度的快速熱退火後,利用拉曼光譜儀以及穿透式電子顯微鏡等分析鍺膜,發現鍺的品質提升。藉由鍺材料在可見光及近紅外光波長下具有較矽為佳的光吸收特性,並搭配P型和N型矽形成P-I-N結構的光偵測器,將可得到和現今矽製程相容的光電元件,並具有良好的光電轉換效率與光響應。;With the rapid development of high-speed communication, light transmission has been the mainstream in academic researches due to its better light absorption characteristics at near-infrared wavelength and potential applications in optical communications. This thesis presents the high-quality germanium on SOI for photodetectors as well as its characteristics and measurement. The Ge was made by rapid-melting-growth technique and investigated by Raman spectroscopy and standard electron microscopy analysis. The high-quality Ge was integrated with P-type and N-type silicon pillars for the PIN photodetector. This work demonstrated that high-quality Ge can be obtained by COMS-compatible process with good photoelectric conversion efficiency and photoresponsity.
    Appears in Collections:[電機工程研究所] 博碩士論文

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