高整合度帶通低雜訊放大器;Highly Integrated Bandpass Low Noise Amplifier

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Title:	高整合度帶通低雜訊放大器;Highly Integrated Bandpass Low Noise Amplifier
Authors:	張嘉峯;Chang,Chia-Feng
Contributors:	電機工程學系
Keywords:	具平衡至非平衡轉換器;帶通濾波器;低雜訊放大器;Balun;Bandpass Filter;Low Noise Amplifier
Date:	2015-01-30
Issue Date:	2015-03-16 15:59:11 (UTC+8)
Publisher:	國立中央大學
Abstract:	本論文研究主軸為帶通濾波器與放大器之整合，並以此實現高整合度射頻前端接收系統，目標為整合帶通濾波器、低雜訊放大器以及平衡至非平衡轉換器等電路方塊，並藉由此整合性設計，改善傳統分時多工射頻通訊系統與各級元件串接所產生的不匹配損耗，並達到縮小面積，提高系統整合度的目的。首先以濾波器植入損耗法設計出發，以可匹配至複數阻抗之帶通濾波器來設計低雜訊放大器的匹配電路，使其具有帶通的響應。電路之被動電路部分以低損耗的積體被動元件(IPD)製程來實現，並將AVAGO電晶體ATF-54143組裝於此IPD晶片上，從而將帶通濾波器以及低雜訊放大器整合至微型化之單一元件內。接續則提出具平衡至非平衡轉換功能之帶通濾波器，具有可額外設計零點的特性，藉以提高濾波器的選擇度，最後以之為基礎，實現具平衡至非平衡轉換功能之帶通低雜訊放大器。電路首先以 IPD製程結合AVAGO電晶體VMMK-1218 進行實做驗證，再利用GaAs製程一併實現主被動元件，完成整合度更高的具平衡至非平衡轉換功能之帶通低雜訊放大器。本研究提出的具平衡至非平衡轉換功能之帶通低雜訊放大器，具有簡單明瞭的設計流程與設計公式，並於IPD與GaAs製程實做驗證其可行性，對於射頻前端電路的微小化、效能提升與降低組裝複雜度均有直接助益。 ;This study investigates the systematic method in designing a highly-integrated RF front-end system based on the integration of bandpass filter and low-noise amplifier (LNA). The target is to integrate the LNA, balun and band-pass filter into a single circuit. By this integrated design we can improve the mismatch loss of conventional RF front end system, and achieve the goal of circuit miniaturization and improve the level of system integration in RF front-end design. The proposed design is based on the insertion loss method for filter design with complex load, such that the impedance matching network of the LNA can have a band-pass response. The passive parts of the proposed bandpass LNA are realized by a low-loss integrated passive device (IPD) process, while the AVAGO ATF-54143 transistor can be mounted on the IPD chip to achieve integration of bandpass filter and LNA in a single circuit with compact circuit size. Then, a new design of balun bandpass filter is proposed. The selectivity and stopband rejection of balun bandpass filter can be improved by the additional transmission zeros. It is then served as the basis of proposed single-to-balanced bandpass LNA designs. The first design is realized using the IPD process along with the AVAGO VMMK-1218 transistor. The second design is realized by the GaAs pseudomorphic high-eletron mobility transistor (PHEMT) process such that both the active and passive parts of the circuit can be realized on a single chip, and thus a higher level of integration can be achieved. The proposed bandpass LNA designs feature simple design flow with explicit design equations. Their performances are verified using the IPD and GaAs pHEMT process. They can help minimize the circuit size, improving the system performance, and also reduce the complexity of system assembly for RF front-end designs.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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